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New nanodevices for electronics - fabrication and characterization
Márik, Marian ; Husák,, Miroslav (oponent) ; Mikulík,, Petr (oponent) ; Hubálek, Jaromír (vedoucí práce)
This work proposes a technique for fabrication of a self-ordered nanostructures for electrical applications. The devices were prepared by anodic oxidation in two lengths and three different heat treatments. The structural characterization using SEM, TEM and EDX technics, respectively, were evaluated from structural and material point of view as well. The unique root structure of the highly self-ordered nanocolumn arrays was evaluated and compared after three different heat treatments: as anodized, vacuum annealed and air annealed, respectively. The possible crystallographic orientation of the columns was not observed, however the nano-crystallites under the root structures were found. The electrical study about the devices shown resistive switching behavior (RS), diode like behavior and a capacitive coupled diode like behavior as well. The active surface, from RS point of view, for the switching mechanism is at the top of the nanocolumns and the gold top electrode. The Schottky barrier height of the Ti/TiO2 interface was calculated with two methods, and it was lower than 1,11 eV for all three devices.
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New nanodevices for electronics - fabrication and characterization
Márik, Marian ; Husák,, Miroslav (oponent) ; Mikulík,, Petr (oponent) ; Hubálek, Jaromír (vedoucí práce)
This work proposes a technique for fabrication of a self-ordered nanostructures for electrical applications. The devices were prepared by anodic oxidation in two lengths and three different heat treatments. The structural characterization using SEM, TEM and EDX technics, respectively, were evaluated from structural and material point of view as well. The unique root structure of the highly self-ordered nanocolumn arrays was evaluated and compared after three different heat treatments: as anodized, vacuum annealed and air annealed, respectively. The possible crystallographic orientation of the columns was not observed, however the nano-crystallites under the root structures were found. The electrical study about the devices shown resistive switching behavior (RS), diode like behavior and a capacitive coupled diode like behavior as well. The active surface, from RS point of view, for the switching mechanism is at the top of the nanocolumns and the gold top electrode. The Schottky barrier height of the Ti/TiO2 interface was calculated with two methods, and it was lower than 1,11 eV for all three devices.
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